Sharp with 35.8% solar cell conversion efficiency refresh the record
“Efficiency is close to internal combustion engine. This is the conversion efficiency to achieve the ideal of breaking 50% of the solar cells in the process of a major breakthrough” (Sharp). Recently, Sharp, the conversion efficiency of solar cells increased to a record 35.8%. If the condenser to 1000 times the conversion efficiency is also expected to reach 45%.Sharp begun a new round of technical personnel development. Objective is to 1 / 10 the cost of non-condensing unit when the conversion efficiency exceeded 40% to PCGA-BP2NX Sony VGP-BPS2 sony VGP-BPS8 VGP-BPS9. To go beyond 40% as the goal is not to intensify the development of a Sharp. In order to achieve high efficiency solar cells, the technology development of competition are becoming more active.
Prior to this, the highest conversion efficiency is the U.S. NREL (National Renewable Energy Laboratory) in 2007, created by 33.8%. Condenser under the conditions of maximum efficiency is the United States Spectrolab have just learned in October 2009 of the 41.6% posted. Including Sharp, including the results of this and create a record of all compounds for the three-in-style multi-junction solar cells. Solar cell conversion efficiency to be increased to VGP-BPS9A/BÂ Sony VGP-BPS3VGP-BPS9/S 319411-001 the limit it requires a mix of different band gap materials in order to take full advantage of the various wavelengths of light. Sharp focus on the past, manufacturing simplicity, chose the lattice constant close to the material. Namely, the top unit (the upper three-junction structure) of InGaP, the unit (ibid., middle) as InGaAs, at the end of unit (ibid., lower) for Ge, bottom of Ge.
This time, Sharp to optimize the band-gap for the first, at the end of unit Ge (bandgap of 0.67eV) from the InGaAs (ibid., 0.97eV) substitution, using InGaP (top), GaAs ( in), InGaAs (bottom), GaAs substrate combination. Therefore, in accordance with the order from top to bottom by PA3399U-1BRS Acer Aspire 3000 battery, from short to long wavelengths of light can be applied effectively to generate electricity.
To resolve issues through the reverse layering exist in such combinations InGaP lattice constant of GaAs substrate and other layers with quite different issues. This phenomenon may give rise to crystal defects, it is difficult to achieve high efficiency. To this end, Sharp turned the film over the past order to HP Pavilion dv2000 Battery HP Pavilion dv6000 Battery HSTNN-LB31 PA3399U-1BRS, through the use of from the InGaP (top) began in turn film “reverse cascade formation method” so that the lattice constant of GaAs substrate basically reached a consensus. Through the lattice constants of the different GaAs (middle) and InGaAs (bottom) inserted between the buffer layer, inhibiting defects. Taking into account the transmission wavelength, the buffer layer and top with the InGaP.
The use of reverse cascade formation method from the InGaP (top) began in turn to the superposition of InGaAs (bottom), the three-layer GaAs substrate need to separate, InGaAs (bottom) layer down to the Si substrate transfer on. InGaP layer in a direction to the surface over Inspiron 510m Battery Sony VGP-BPS9/B battery Sony VGP-BPS5. Bonding with the Si substrate to use is “similar to the solder material” (Sharp).
In addition to more efficient, the method can also reduce costs in the future. GaAs substrate separation process is currently used by curettage GaAs substrate method. If in the future to take advantage of plug stripped layer above EVO N410c Battery Compaq Evo N600 Battery, who wish to divest part of the implementation of ion implantation and other methods to complete the process, then, GaAs substrate is expected to achieve reuse. As the GaAs substrate is very expensive, so the realization of this method can significantly reduce costs.
With these improvements, “than crystalline Si-high two-digit,” is expected to reduce manufacturing costs to the current 1 / 10. Its use is currently limited to satellite via APple A1021 adapter or ibook g4 adapter, but with lower costs in the future may also be extended to other areas.
Conversion efficiency improvements do not stop there. 2025, Sharp plans to develop a module conversion efficiency of 40%, 1000 times the condenser when the conversion efficiency of 50% of the revolutionary solar cells. Through the InGaAs (bottom) below the addition of new layers, to achieve four resultant compound multi-junction solar cells through Compaq Evo N620C Battery Compaq EVO N400 Battery. Manufacturing methods of Acer BTP-58A1 battery is still the method of reverse cascade formation. In addition to the different band gap materials, the use of quantum dots band gap control layer is also expected to become a new layer.
South Korea’s LG and Taiwan’s AU Optronics (AUO) is scheduled to “Green Device 2009 Forum” (10/28 ~ 10/30) held on to explore the solar cell business and technology strategy seminar solar cells.

